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| JOURNAL PAPERS |
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D. Shahrjerdi, S. W. Bedell, C. Ebert, C. Bayram, B. Hekmatshoar, K. Fogel, P. Lauro, M. Gaynes, T. Gokmen, J. Ott, and D. K. Sadana,
"High-Efficiency Thin-Film InGaP/InGaAs/Ge Tandem Solar Cells Enabled By Controlled Spalling Technology,"
Applied Physics Letters 100, 053901 (2012). APL link or .pdf
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| (26) |
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C. Bayram,
"High quality AlGaN/GaN superlattices for near- and mid-infrared intersubband transitions,"
Journal of Applied Physics 111, 013514 (2012). JAP link or .pdf
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| (25) |
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C. Bayram, Z. Vashaei, and M. Razeghi,
"Reliability in room-temperature negative differential resistance characteristics of low-aluminium-content AlGaN/GaN double-barrier resonant tunneling diodes,"
Applied Physics Letters 97, 181109 (2010). APL link or .pdf
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| (24) |
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Z. Vashaei, C. Bayram, P. Lavenus, and M. Razeghi,
"Photoluminescence characteristics of polar and nonpolar AlGaN/GaN superlattices,"
Applied Physics Letters 97, 121918 (2010). APL link or .pdf |
| (23) |
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C. Bayram, Z. Vashaei, and M. Razeghi,
“Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes,”
Applied Physics Letters 97, 092104 (2010). APL link or .pdf |
| (22) |
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E. Cicek, Z. Vashaei, R. McClintock, C. Bayram, and M. Razeghi,
"Geiger-mode operation of ultraviolet avalanche photodiodes grown on sapphire and free-standing GaN substrates,"
Applied Physics Letters 96, 261107 (2010). APL link or .pdf |
| (21) |
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Z. Vashaei, E. Cicek, C. Bayram, R. McClintock, and M. Razeghi,
"GaN avalanche photodiodes grown on m-plane freestanding GaN substrate,"
Applied Physics Letters 96, 201908 (2010). APL link or .pdf |
| (20) |
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Z. Vashaei, C. Bayram and M. Razeghi,
“Demonstration of negative differential resistance in GaN/AlN resonant tunneling diodes at room temperature,”
Journal of Applied Physics 107, 083505 (2010). JAP link or .pdf |
| (19) |
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C. Bayram, Z. Vashaei, and M. Razeghi,
“AlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition,”
Applied Physics Letters 96, 042103 (2010). APL link or .pdf |
| (18) |
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C. Bayram, N. Péré-Laperne, and M. Razeghi,
“Effects of well width and growth temperature on optical and structural characteristics of AlN/GaN superlattices grown by metal-organic chemical vapor deposition,”
Applied Physics Letters 95, 201906 (2009). APL link or .pdf |
| (17) |
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N. Péré-Laperne, C. Bayram, L. Nguyen-Thê, R. McClintock, and M. Razeghi,
"Tunability of Intersubband absorption from 4.5 to 5.3 µm in a GaN/Al0.2Ga0.8N superlattices grown by metalorganic chemical vapor deposition,"
Applied Physics
Letters 95, 131109 (2009). APL link or .pdf |
| (16) |
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C. Bayram and M. Razeghi,
"ULTRAVIOLET DETECTORS: Nitrides push performance of UV photodiodes,"
Laser Focus World 45(9), 47-51 (2009). LFW link or .pdf |
| (15) |
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C. Bayram, D. Rogers, F. H. Teherani, and
M. Razeghi,
"Fabrication and Characterization of Novel Hybrid
Green LEDs Based on Substituting n-type ZnO for n-type GaN in an
Inverted p-n Junction,"
Journal of Vacuum Science and Technology
B 27 (3), 1784 (2009). JVST B link or .pdf |
| (14) |
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V. E. Sandana, D. J. Rogers, F. H. Teherani, R. McClintock, C.Bayram, M. Razeghi, H.-J. Drouhin, M.C. Clochard, V. Sallet, G. Garry, and F. Falyouni,
"Comparison of ZnO Nanostructures Grown Using pulsed layer deposition, metalorganic chemical vapor deposition, and physical vapor transport",
Journal of Vacuum Science and Technology
B 27 (3), 1678 (2009). JVST B link or .pdf |
| (13) |
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C. Bayram, N. Péré-laperne,
R. McClintock, B. Fain and M. Razeghi,
"Pulsed Metalorganic
Chemical Vapor Deposition of High Quality AlN/GaN Superlattices
for Near-Infrared Intersubband Transitions,"
Applied Physics
Letters 94, 121902 (2009). APL link or .pdf |
| (12) |
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C. Bayram and M. Razeghi,
"Stranski-Krastanov growth of InGaN quantum dots emitting in
green spectra,"
Applied Physics A 96, 403 (2009). AP A link or .pdf |
| (11) |
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C. Bayram, J. L. Pau, R. McClintock, and M.
Razeghi,
"Comprehensive study of blue and green multi-quantum-well
light emitting diodes grown on conventional and lateral epitaxial
overgrowth GaN,"
Applied Physics B 95, 307 (2009). AP B link or .pdf |
| (10) |
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J. L. Pau, C. Bayram, P. Giedraitis, R. McClintock, and M. Razeghi,
“GaN nanostructured p-i-n photodiodes,”
Applied Physics
Letters 93, 221104 (2008). APL link or .pdf |
(9) |
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C. Bayram, J. L. Pau, R. McClintock, M. Razeghi,
M. P. Ulmer, and D. Silversmith,
“High Quantum Efficiency
Back-illuminated GaN Avalanche Photodiodes,”
Applied Physics
Letters 93, 211107 (2008). APL link or .pdf |
(8) |
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C. Bayram, F. H. Teherani, D. Rogers, and M.
Razeghi,
“A hybrid green light-emitting diode comprised of
n-ZnO/(InGaN/GaN) multi-quantum wells/p-GaN,”
Applied Physics
Letters 93, 081111 (2008). APL link or .pdf |
(7) |
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C. Bayram, J. L. Pau, R. McClintock, and M.
Razeghi,
“Performance enhancement of GaN ultraviolet avalanche
photodiodes with p-type delta-doping,”
Applied Physics Letters 92, 241103 (2008). APL link or .pdf |
(6) |
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C. Bayram, J. L. Pau, R. McClintock, and M.
Razeghi,
“Delta-doping optimization for high quality p-type
GaN,”
Journal of Applied Physics 104, 083512 (2008). JAP link or .pdf |
(5) |
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J. L. Pau, C. Bayram, R. McClintock, D. Silversmith, and M. Razeghi,
“Back-illuminated separate absorption and multiplication GaN avalanche photodiodes,”
Applied Physics Letters 92, 101120 (2008). APL link or .pdf |
(4) |
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J. L. Pau, R. McClintock, C. Bayram, K. Minder, D. Silversmith, and M. Razeghi,
“High Optical Response in Forward Biased (In,Ga)N-GaN MultiquantumWell Diodes under Barrier Illumination,”
IEEE Journal of Quantum Electronics 44, 346 (2008). IEEE link or .pdf |
(3) |
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K. Minder, J. L. Pau, R. McClintock, P. Kung, C. Bayram, M. Razeghi, and D. Silversmith,
“Scaling in GaN avalanche photodiodes designed for back-illumination,”
Applied Physics Letters 91, 073513 (2007). APL link or .pdf |
(2) |
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J. L. Pau, R. McClintock, K. Minder, C. Bayram, P. Kung, M. Razeghi, E. Munoz, and D. Silversmith,
“Gieger-mode operation of back-illuminted GaN avalanche photodiodes,”
Applied Physics Letters 91, 041104 (2007). APL link or .pdf |
(1) |
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R. McClintock, J. L. Pau, K. Minder, C. Bayram, P. Kung, and M. Razeghi,
“Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes,”
Applied Physics Letters 90, 141112 (2007). APL link or .pdf |
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